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Τύπος: Άρθρο σε περιοδικό
Τίτλος: Interfacial characterization and transport conduction mechanisms in Al|HfO2|p-Ge structures: energy band diagram
Συγγραφέας: [EL] Μποτζακάκη, Μάρθα[EN] Botzakaki, Martha
[EL] Σκουλατάκης, Γιώργιος[EN] Skoulatakis, George
[EL] Παπαγεωργίου, Γιώργος[EN] Papageorgiou, Georgios
[EL] Κροντηράς, Χριστόφορος[EN] Krontiras, Christoforos
Ημερομηνία: 9-Μαΐ-2019
Περίληψη: Ge-based metal-oxide semiconductor structures exhibiting thin ALD-grown high-k dielectric HfO2 films were fabricated and characterized chemically, structurally, and electrically. X-ray photoelectron (XP) spectroscopy confirms the good stoichiometry of the ALD-grown HfO2 films. Furthermore, through the analysis of the XP spectra, the conduction and valence band offsets of HfO2|p-Ge were calculated to be equal to 1.8 ± 0.2 eV and 2.8 ± 0.2 eV, respectively. C(V) and G(V) analysis reveals structures with a welldefined MOS behavior with Dit values in the range of 1011 eV–1 cm–2 and a dielectric constant of HfO2 films of 20. The dominant carrier transport conduction mechanisms were studied through J(V) analysis, performed at both substrate and gate electron injection. Specifically, in the low voltage region (V < 0.2 V), the prevailing conduction mechanism is Ohmic, with an activation energy of 0.28 eV for both substrate and gate electron injection. In the voltage range 0.4–1.5 V, the dominant conduction mechanism is Frenkel–Poole, through which the trap energy level into HfO2 films (ϕt) is calculated to be ϕt = 0.36 eV. Schottky conduction mechanism is the prevailing one, for high applied bias voltages (V > 3.0 V) and high temperatures (>450 K). Applying Schottky’s emission model the energy barrier heights of HfO2|p-Ge and Al|HfO2 interfaces were evaluated equal to 1.7 ± 0.2 eV and 1.3 ± 0.2 eV, respectively. Combining the XPS and J(V) analysis results, the energy band diagram of Al|HfO2|p-Ge structures is constructed. The calculated values of conduction and valence band offsets via XPS and J(V) measurements are in very good agreement.
Γλώσσα: Αγγλικά
Σελίδες: 11
DOI: 10.1134/S1063782620050036
ISSN: 1063-7826
Θεματική κατηγορία: [EL] Άλλες Επιστήμες Μηχανικού και Τεχνολογίες[EN] Other Engineering and Technologies
Λέξεις-κλειδιά: ALD HfO2p-Ge, XPSconductivity mechanismsenergy band diagram
Κάτοχος πνευματικών δικαιωμάτων: © by the authors.
© Pleiades Publishing, Ltd., 2020.
Ηλεκτρονική διεύθυνση του τεκμηρίου στον εκδότη: https://link.springer.com/article/10.1134/S1063782620050036
Ηλεκτρονική διεύθυνση περιοδικού: https://www.springer.com/journal/11453
Τίτλος πηγής δημοσίευσης: Semiconductors
Τεύχος: 5
Τόμος: 54
Σελίδες τεκμηρίου (στην πηγή): 543-553
Σημειώσεις: This research has been co-financed by the Operational Program “Human Resources Development, Education, and Lifelong Learning” and is co-financed by the European Union (European Social Fund) and Greek national funds
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