1. Αποθετήριο Παραδοτέων Υποτρόφων Δράσεων ΕΣΠΑ Τριτοβάθμιας Εκπαίδευσης 2017-2023
2. Όλο το Αποθετήριο
3. Ερευνητικές ομάδες

Τύπος:	Αναρτημένη ανακοίνωση (poster)
Τίτλος:	Energy band profile of Al /HfO2 / p-Ge MOS structures by XPS and electrical characterization
Συγγραφέας:	[EL] Σκουλατάκης, Γιώργιος[EN] Skoulatakis, George [EL] Παπαγεωργίου, Γιώργος[EN] Papageorgiou, Georgios [EL] Κροντηράς, Χριστόφορος[EN] Krontiras, Christoforos
Ομιλητής:	[EL] Μποτζακάκη, Μάρθα[EN] Botzakaki, Martha
Ημερομηνία:	05/11/2018
Περίληψη:	The construction of the energy band profile of MOS structures based on high-k dielectrics and high mobility substrates is critical for the understanding and optimization of their electrical response [1,2]. It is well known that some of the crucial criteria for an alternative to SiO2 gate dielectric include a defectless interface (atomically flat with low rms roughness) exhibiting low Density of interface traps (Dit), a high value of permittivity (at least higher than SiO2) as well as a sufficient barrier height that will effectively block electrons and holes. High quality HfO2 constitutes one of the possible alternative high-k dielectrics mainly due to its chemical stability and high permittivity value (k=20-25) [3,4]. The aim of the present work is the construction of the interface band diagrams of HfO2/ p-Ge combining two different experimental techniques i.e. X-ray Photoelectron Spectroscopy and electrical conductivity measurements. The implementation of these two methods gives a thorough insight of the electrical behaviour of MOS structures. HfO2/ p-Ge, up to 15nm, structures were grown via Atomic Layer Deposition (ALD) technique at 250oC. The precursor, used for the deposition of HfO2 was Tetrakis(Dymethylamido)Hafnium while the co-reactant / oxidant was water. The chemical composition as well as the energy barrier height between 5nm HfO2 / p-Ge interface were studied ex situ by XPS. Al gate electrodes were deposited onto HfO2 films, by thermal evaporation technique, resulting in Al / 15nm HfO2/ p-Ge MOS structures. The structures were electrically characterized through the analysis of C-V, G-V and C-f measurements in order to evaluate the density of interfacial traps (Dit) and the EOT value. Furthermore, J-V measurements were performed and analyzed, for both positive and negative gate voltages with temperature as a parameter. Conduction mechanisms and energy barrier heights were verified / calculated for both negative and positive electric fields.
Γλώσσα:	Αγγλικά
Τόπος δημοσίευσης:	Θεσσαλονίκη, Ελλάδα
Σελίδες:	1
Θεματική κατηγορία:	[EL] Άλλες Επιστήμες Μηχανικού και Τεχνολογίες[EN] Other Engineering and Technologies
Κάτοχος πνευματικών δικαιωμάτων:	Μποτζακάκη Μάρθα Σκουλατάκης Γεώργιος Παπαγεωργίου Γεώργιος Κροντηράς Χριστόφορος
Διατίθεται ανοιχτά στην τοποθεσία:	http://micro-nano2018.sci.auth.gr/sites/default/files/M&N2018_CONFERENCE_PROGRAM_WITH_ABSTRACTS.pdf
Ηλεκτρονική διεύθυνση του τεκμηρίου στον εκδότη:	http://micro-nano2018.sci.auth.gr/sites/default/files/M&N2018_CONFERENCE_PROGRAM_WITH_ABSTRACTS.pdf
Τίτλος πηγής δημοσίευσης:	7th International Conference "Micro&Nano 2018" Book of Abstracts
Σελίδες τεκμηρίου (στην πηγή):	16
Τοποθεσία εκδήλωσης:	Thessaloniki, Greece
Ημ/νία έναρξης εκδήλωσης:	05/11/2018
Ημ/νία λήξης εκδήλωσης:	07/11/2018
Σημειώσεις:	This/ Τhe research/project is implemented through /has been co-financed by the Operational Program "Human Resources Development, Education and Lifelong Learning" and is cofinanced by the European Union (European Social Fund) and Greek national funds.
Εμφανίζεται στις συλλογές:	Ερευνητικές ομάδες